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S0402xH
SENSITIVE GATE SCR
FEATURES
T(RMS) www..com
I = 4A VDRM = 200V to 800V Low IGT < 200 A
K A G
DESCRIPTION The S0402xH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications where low gate sensitivity is required. TO220 non-insulated (Plastic)
ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM Parameter RMS on-state current (180 conduction angle) Mean on-state current (180 conduction angle) Non repetitive surge peak on-state current (Tj initial = 25C ) I2t Value for fusing Critical rate of rise of on-state current IG = 10 mA diG /dt = 0.1 A/s. Storage and operating junction temperature range Maximum lead temperature for soldering during 10s at 4.5mm from case Tc= 110C Tc= 110C tp = 8.3 ms tp = 10 ms tp = 10 ms Value 4 2.5 55 50 12.5 100 - 40, + 150 - 40, + 125 260 A2s A/s C C Unit A A A
I2t dI/dt Tstg Tj Tl
Symbol VDRM VRRM
January 1995
Parameter B Repetitive peak off-state voltage Tj = 125C RGK = 1K 200
Voltage D 400 M 600 N 800
Unit V
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S0402xH
THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Junction to ambient Junction to case for DC Parameter Value 60 4 Unit C/W C/W
GATE CHARACTERISTICS (maximum values) PG (AV)= 0.5 W PGM = 5 W (tp = 20 s)
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IGM = 2 A (tp = 20 s)
ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD VRGM tgd IH IL VTM IDRM IRRM dV/dt tq Test Conditions VD=12V (DC) RL=140 VD=12V (DC) RL=140 VD=VDRM RL=3.3k RGK = 1 K IRG =10A VD=VDRM ITM= 3 x IT(AV) dIG/dt = 0.1A/s IG = 10mA IT= 50mA RGK = 1 K IG=1mA RGK = 1 K ITM= 8A tp= 380s VD = VDRM RGK = 1 K VR = VRRM VD=67%VDRM RGK = 1 K ITM= 3 x IT(AV) VR =35V dI/dt=10A/s tp=100s dV/dt=2V/s VD= 67%VDRM RGK = 1 K Tj= 25C Tj= 25C Tj= 125C Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 110C Tj= 110C Tj= 110C MAX MAX MIN MIN TYP MAX MAX MAX MAX MAX TYP MAX Sensitivity 02 200 1.5 0.1 8 0.5 10 20 1.6 5 500 10 100 A V V V s mA mA V A A V/s s Unit
ORDERING INFORMATION
S
SCR MESA GLASS CURRENT
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04
02
SENSITIVITY
M
H
PACKAGE : H = TO220 Non-insulated VOLTAGE
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S0402xH
Fig.1 : Maximum average power dissipation versus average on-state current. Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact.
P (W) Tcase (o C)
P (W)
3.5
360
O
3.5 3
DC Rth = 0 C/W 5 o C/W 10 o C/W 15 o C/W
o
-110
3 2.5 2 www..com 1.5 1 0.5 0 0 0.5 1
= 30 o = 90 = 60
o
2.5 2
-115
= 180 = 120
o o
o
= 180
o
1.5 1
I T(AV)(A)
-120
0.5
Tamb ( C)
o
1.5
2
2.5
3
3.5
4
0 0
20
40
60
80
100
120
-125 140
Fig.3 : Average on-state current versus case temperature.
I T(AV) (A)
Fig.4 : Relative variation of thermal impedance versus pulse duration.
Zth/Rth 1
5
DC
4 3
0.1
Zt h( j-c)
Zt h( j-a)
2 1
= 180
o
Tcase ( C)
o
tp (s)
0
0
10
20
30
40
50
60
70
80
90 100 110 120 130
0.01 1E-3
1E-2
1E-1
1E +0
1 E +1
1E +2 5 E+2
Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature.
Igt[Tj] o Igt[Tj=25 C] Ih[Tj] o Ih[Tj=25 C]
Fig.6 : Non repetitive surge peak on-state current versus number of cycles.
ITSM(A)
60
Tj initial = 25 C
o
10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 -40 -20 0 20 40 60 80 100 120 140 Ih Igt
50 40 30 20 10
Number of cycles
0 1
10
100
100 0
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S0402xH
Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of I2t.
I TSM (A). I2 t (A 2 s)
Fig.8 : On-state characteristics (maximum values).
I TM (A)
Tj initial = 25 oC
1000
100
Tj initial o 25 C
100
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I TSM
Tj max
10
I2 t
Tj max Vto =0.93 V Rt =0.072
10
1 1
tp(ms)
VTM (V)
10
1 0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
4/5
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S0402xH
PACKAGE MECHANICAL DATA TO220 Non-insulated (Plastic) DIMENSIONS Millimetres Inches Typ. Min. Max. Typ. Min. Max. A G I
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REF. A B C D F G L D N1 N M H I J L M N N1 O P Marking : type number Weight : 1.8 g
H J B C
10.3 6.3 12.7 4.2 3.0 4.5 3.53 1.2 2.7 5.3 2.54 1.2 1.4 1.15 0.100 4.7 3.66 1.3 0.9 0.106 6.5 9.1 0.500 0.248 0.256
0.406 0.358 0.165 0.118 0.177 0.185 0.139 0.144 0.047 0.051 0.035 0.209 0.047 0.055 0.045
O P
F
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.
(c) 1995 SGS-THOMSON Microelectronics - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5
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